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| SEMiX653GAR176HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 1000 V VGE 20 V VCES 1700 V VGES tpsc Tj Inverse diode IF Tc = 25 C Tc = 80 C Tj = 125 C Tj = 150 C Tc = 25 C Tc = 80 C 1700 619 438 450 900 -20 ... 20 10 -55 ... 150 545 365 450 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 900 2900 -40 ... 150 Tc = 25 C Tc = 80 C 545 365 450 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 900 2900 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A A A A A C A C V Conditions Values Unit SEMiX(R) 3s Trench IGBT Modules SEMiX653GAR176HDs Tj = 150 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 150 C Typical Applications* * AC inverter drives * UPS * Electronic welders Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 450 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V Tj = 25 C Tj = 125 C 5.2 Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 39.6 1.65 1.31 4200 1.67 2 2.45 1 0.9 2.2 3.4 5.8 0.1 2.45 2.9 1.2 1.1 2.8 4.0 6.4 0.3 V V V V m m V mA mA nF nF nF nC Conditions min. typ. max. Unit VGE=VCE, IC = 18 mA VGE = 0 V VCE = 1700 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C GAR (c) by SEMIKRON Rev. 11 - 16.12.2009 1 SEMiX653GAR176HDs Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C IF = 450 A Tj = 125 C di/dtoff = 4200 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 1200 V per diode Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Temperatur Sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% K res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 C TC = 125 C 20 0.7 1 0.04 5 5 300 nH m m K/W Nm Nm Nm g Tj = 25 C Tj = 125 C IF = 450 A Tj = 125 C di/dtoff = 4200 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 1200 V per diode 0.9 0.7 1.3 1.8 0.9 0.7 1.3 1.8 1.7 1.7 1.1 0.9 1.3 1.8 380 130 73 0.11 1.7 1.7 1.1 0.9 1.3 1.8 380 130 73 0.11 1.9 1.9 1.3 1.1 1.3 1.8 Conditions VCC = 1200 V IC = 450 A RG on = 3.6 RG off = 3.6 Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C min. typ. 290 90 300 975 190 180 max. Unit ns ns mJ ns ns mJ 0.054 1.90 1.9 1.3 1.1 1.3 1.8 K/W V V V V m m A C mJ K/W V V V V m m A C mJ K/W SEMiX 3s Trench IGBT Modules SEMiX653GAR176HDs (R) Inverse diode VF = VEC IF = 450 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 Typical Applications* * AC inverter drives * UPS * Electronic welders Freewheeling diode VF = VEC IF = 450 A VGE = 0 V chip VF0 GAR 2 Rev. 11 - 16.12.2009 (c) by SEMIKRON SEMiX653GAR176HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 11 - 16.12.2009 3 SEMiX653GAR176HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 11 - 16.12.2009 (c) by SEMIKRON SEMiX653GAR176HDs SEMiX 3s spring configuration (c) by SEMIKRON Rev. 11 - 16.12.2009 5 SEMiX653GAR176HDs This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 6 Rev. 11 - 16.12.2009 (c) by SEMIKRON |
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